標題: Light-emitting polymer space-charge-limited transistor
作者: Chen, Chun-Yu
Chao, Yu-Chiang
Meng, Hsin-Fei
Horng, Sheng-Fu
物理研究所
Institute of Physics
關鍵字: brightness;cathodes;light emitting diodes;organic semiconductors;space-charge limited devices;transistors
公開日期: 1-Dec-2008
摘要: Polymer light-emitting transistor is realized by vertically stacking a top-emitting polymer light-emitting diode on a polymer space-charge-limited transistor. The transistor modulates the current flow of the light-emitting diode by the metal-grid base voltage. The active semiconductor of the transistor is poly(3-hexylthiophene). Yellow poly(para-phenylene vinylene) derivative is used as the yellow emitting material. As the cathode is fixed at -12 V and the grid base voltage varies from 0.9 to -0.9 V the light emission is turned on and off with on luminance up to 1208 cd/m(2). The current efficiency of the light-emitting transistor is 10 cd/A.
URI: http://dx.doi.org/10.1063/1.3027057
http://hdl.handle.net/11536/8052
ISSN: 0003-6951
DOI: 10.1063/1.3027057
期刊: APPLIED PHYSICS LETTERS
Volume: 93
Issue: 22
結束頁: 
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