標題: 新穎快閃記憶體結構使用HfO2為電荷捕陷層於SiGe與Si通道之研究
Study on Novel Structures for Flash Memory using HfO2 as Charge Trapping Layer with SiGe and Si Channels
作者: 洪錦石
Jin-Shi Hong
雷添福
Tan-Fu Lei
電機學院微電子奈米科技產業專班
關鍵字: 快閃記憶體;氧化鉿;高介電係數;flash memory;hfo2;high k
公開日期: 2006
摘要: 本論文製作不同的非揮發性快閃記憶體,改採用矽鍺通道來取代矽通道的非揮發性快閃記憶體及製作成P通道的SONOS式的兩種不同的非揮發性快閃記憶體;在文中我們利用不同的寫入╱抹除操作方式來操作快閃記憶體元件。藉此達成電荷捕捉效率佳、快的寫入╱抹除速度、大的記憶體窗口、儲存資料持久性以及寫入、抹除操作造成的性能退化現象少的非揮發性快閃記憶體。 首先在第一章節,將傳統SONOS型式的記憶體結構材料做改變,為了提高載子注入捕陷層的效率提高,將傳統氮化矽層用氧化鉿層取代,來做為捕陷電荷層以及將矽的通道換成矽鍺的通道,而因為使用了矽鍺材料的關係,使得我們製程溫度必須降低以避免鍺析出,另外,在矽鍺通道上成長二氧化矽(SiO2)其品質較在矽通道上成長二氧化矽差,使用二氧化矽做為穿隧層不是一個好的方式,因此採用氮氧化矽材料做為穿隧層;在第二章節中,我們延續第一章節,改變捕陷電荷層材料的方式,由氧化鉿層變成奈米晶粒的氧化矽鉿,在文中明顯表現出使用氧化矽鉿的奈米晶粒做為捕陷電荷層的優點,有較好的資料保存能力、減少寫入或抹除操作造成的性能退化等,均比使用氧化鉿做捕陷電荷層的快閃記憶體性能佳。 在本文的最後我們製作P通道SONOS型式的快閃記憶體,將傳統氮化矽層改用氧化矽鉿奈米晶粒做成捕陷電荷層,由於能帶的差異,使得寫入╱抹除的速度被明顯的改善,同樣的使用氧化矽哈奈米晶粒,使得電荷捕捉效率佳、快的寫入╱抹除速度、大的記憶體窗口、儲存資料持久性以及寫入等優點的快閃記憶體。
In this paper, we develop novel structure flash memory by using SiGe channel. The trapping layer use HfO2 and HfSiOx materials. Then, we fabricate p-channel SONOS-type flash memory with HfSiOx trapping layer devices. Experimental characteristics result large memory windows, relative high P/E speed and good retention for our SiGe channel memory and p-channel SONOS-type nonvolatile flash memory. First, the SiGe channel flash memories by using high-k dielectric materials hafnium oxide trapping layer were proposed and demonstrated. Decreasing to process temperature was used to avoid germanium precipitated in our device. Low temperature oxy-nitride layer was used for tunneling layer. For the memory operation, we use CHE programming and BTBHH erasing. Experimental characteristics result large memory windows, relative high P/E speed and good retention. Next, the SiGe channel flash memory by using materials hafnium silicate trapping layer were proposed and demonstrated. We use CHE programming and BTBHH erasing for the memory operation. Experimental characteristics result large memory windows, relative high P/E speed, two-bit application, good retention and disturbances. Finally, the p-channel SONOS-type flash memory using HfO2 nanocrystal trapping layer has been fabricated. The experimental results show that the samples have large memory windows, good retention, high P/E speed.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT009394509
http://hdl.handle.net/11536/80339
Appears in Collections:Thesis


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