標題: 新穎的SONOS儲存單元製程之研究
A Study of Novel SONOS Cell Storage Process
作者: 黃一桀
Yi-Chieh Huang
羅正忠
Jen-Chung Lou
電機學院微電子奈米科技產業專班
關鍵字: 快閃記憶體;含氮氧化層;SONOS;flash memory;oxynitride;SONOS
公開日期: 2006
摘要: 在非揮發性記憶體的發展與研究過程中,矽-氧化矽-氮化矽-氧化矽-矽(Silicon-Oxide-Nitride-Oxide-Silicon,SONOS)記憶體元件具有許多優點備受矚目。然而隨著尺寸的微縮以及為了維持良好的儲存能力,各種材料及結構也被使用在SONOS結構裡用以改善可靠度的相關問題。 本篇論文提出一種新穎的SONOS儲存單元製造之方法。首先,我們在試片上成長一層薄的化學氧化層(chemical oxide);接著使用LPCVD通入NH3氮化化學氧化層,然後沈積氮化矽層;之後使用爐管通入O2對氮化矽層進行再氧化。優點在於LPCVD可同時氮化化學氧化層以及沈積氮化矽;而再氧化過程中,可趕走氮化穿遂氧化層所產生的氫,使得穿遂氧化層表面形成具高氮濃度的氮氧化層,同時使得氮化矽層形成具漸變式梯形能帶的結構。另外探討不同再氧化時間對於可靠度特性的影響。研究結果發現,經過再氧化處理之後,在適當的條件下,確實能有效增大記憶體操作窗口,並且減緩寫入、抹除等操作所造成性能退化的速率。
Nowadays, SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) memory device becomes popular because of its simplicity and scalable in structure by comparing with conventional floating gate flash memory. In this thesis, we proposed a novel process to fabricate a SONOS capacitor. This process mainly included four process stages – chemical oxide growth, nitridation, forming the Si3N4 and subsequent furnace O2 reoxidation. By this process, the oxynitride as tunnel dielectric and a tapered bandgap nitride are obtained. It is found that the structure formed by this novel process exhibits improved cycling endurance and charge-trapping efficiency. The result of the experiment can provide a very promising solution for future flash memory design.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT009394503
http://hdl.handle.net/11536/80332
Appears in Collections:Thesis


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