Batch type plasma dry etcher for deep trench process simulation model set up & process optimization
Recently, the development of micro etching process for silicon subtract in marketing is growing very fast, the requirements of processing precision and process resolution have been continuously requested, but in the field of power diode, the most concern is on the higher throughput and lower manufacturing cost technology. The plasma etching is the kind of dry etching technology that is difference with the traditional wet etching technology. The most of the power diode manufacturers still use the wet etching process, due to there are some of the technical bottleneck couldn’t be broken through. In order to overcome the wet etching disadvantage and to minimize the additional waste chemical treatment cost, therefore the purpose of this thesis is to study the customization of the batch type plasma dry etcher for power diode process, to analysis the etching mechanism and build up the simulation model for the distribution of plasma power density that will be fitted with the measurement data. By this way will confirm the relationship between simulation model and measurement data. Therefore we can get the optimization factors by simulation model then to adjust not only parameters setting but also hardware modification. This will help us to improve the uniformity within whole run, to obtain the high quality / low manufacturing cost process and process optimization.