Title: Time-resolved photoluminescence of isoelectronic traps in ZnSe(1-x)Te(x) semiconductor alloys
Authors: Lin, Y. C.
Chou, W. C.
Fan, W. C.
Ku, J. T.
Ke, F. K.
Wang, W. J.
Yang, S. L.
Chen, W. K.
Chang, W. H.
Chia, C. H.
Department of Electrophysics
Issue Date: 15-Dec-2008
Abstract: Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe(1-x)Te(x). As the Te concentration increases, the stretching exponent beta initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.
URI: http://dx.doi.org/10.1063/1.3054162
ISSN: 0003-6951
DOI: 10.1063/1.3054162
Volume: 93
Issue: 24
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Appears in Collections:Articles