標題: Crucial integration of high work-function metal gate and high-k blocking oxide on charge-trapping type flash memory device
作者: Tsai, Ping-Hung
Chang-Liao, Kuei-Shu
Yang, Dong-Wei
Chung, Yuan-Bin
Wang, Tien-Ko
Tzeng, P. J.
Lin, C. H.
Lee, L. S.
Tsai, M. J.
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: alumina;flash memories;molybdenum compounds;work function
公開日期: 22-Dec-2008
摘要: Charge-trapping type flash memory devices with various integrations of metal gates having different work functions and blocking oxides were investigated in this work. Improved erasing speed together with acceptable reliability characteristics can be achieved by the integration of high work-function metal gate and high-k blocking oxide due to an efficient suppression of electron back tunneling through the blocking oxide during erasing operation for the MoN sample. Specifically, the high work-function value of MoN metal gate can be kept only by integrating with the Al(2)O(3) blocking oxide because it can suppress the formation of molybdenum-silicide. Moreover, high-speed erasing can also be demonstrated by combining the MoN metal gate with an HfAlO charge trapping layer when band-to-band hot hole erasing method is adopted.
URI: http://dx.doi.org/10.1063/1.3043976
http://hdl.handle.net/11536/8018
ISSN: 0003-6951
DOI: 10.1063/1.3043976
期刊: APPLIED PHYSICS LETTERS
Volume: 93
Issue: 25
結束頁: 
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