標題: Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory Devices
作者: Hu, Chih-Wei
Chang, Ting-Chang
Tu, Chun-Hao
Chiang, Cheng-Neng
Lin, Chao-Cheng
Lee, Sheng-Wei
Chang, Chun-Yen
Sze, Simon M.
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: germanium;nanostructured materials;nickel alloys;nucleation;Raman spectra;random-access storage;semiconductor doping;silicon alloys;sputter deposition;thin films;transmission electron microscopy;X-ray photoelectron spectra
公開日期: 2009
摘要: In this work, a NiSiGe mixed film was deposited by the cosputtering approach. The rapidly thermal treatment condition was executed at 600 degrees C for 30 s in nitrogen ambient to form the nanocrystal structure. From the results of the transmission electron microscopy, the annealed NiSiGe film reveals a larger nanocrystal size and density distribution than pure NiSi. X-ray photoelectron spectroscopy analyses were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystal formation during the thermal process. Raman spectroscopy and an energy-dispersive spectrometer also exhibit the compositions of nanocrystals including Ni, Si, and Ge elements. With the better formation process, a remarkable improvement of memory effect is observed by comparing with the NiSi and NiSiGe nanocrystal memory devices. Also, the NiSiGe nanocrystal device shows a better retention characteristic due to the lower quantum confinement effect.
URI: http://hdl.handle.net/11536/7992
http://dx.doi.org/10.1149/1.3167386
ISSN: 0013-4651
DOI: 10.1149/1.3167386
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 156
Issue: 9
起始頁: H751
結束頁: H755
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