標題: Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer Structure
作者: Lin, Chao-Cheng
Chang, Ting-Chang
Tu, Chun-Hao
Chen, Wei-Ren
Feng, Li-Wen
Sze, Simon M.
Tseng, Tseung-Yuen
Chen, Sheng-Chi
Lin, Jian-Yang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: band structure;molybdenum;molybdenum compounds;nanostructured materials;oxidation;random-access storage;rapid thermal annealing;reduction (chemical);silicon compounds;transmission electron microscopy;X-ray photoelectron spectra
公開日期: 2009
摘要: An oxygen-incorporated Mo silicide layer was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge-storage characteristics of Mo nanocrystals influenced by Mo oxide and its surrounding oxide were investigated through X-ray photoelectron spectroscopy and electrical measurement. X-ray photoelectron spectral analyses revealed a redox reaction in the oxygen-incorporated Mo silicide layer after rapid thermal annealing at a critical temperature. The memory window and retention were improved because of the reduction of Mo oxide. Furthermore, the double-layer nanocrystal structure was fabricated through the annealed stacked oxygen incorporated Mo silicide layer. A larger memory window and long retention were found for the double-layer nanocrystal structure. We used an energy band diagram to explain the difference in retention characteristics between single- and double-layer structures.
URI: http://hdl.handle.net/11536/7991
http://dx.doi.org/10.1149/1.3079358
ISSN: 0013-4651
DOI: 10.1149/1.3079358
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 156
Issue: 4
起始頁: H276
結束頁: H280
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