標題: Photosensitivity Analysis of Low-Temperature Poly-Si Thin-Film Transistor Based on the Unit-Lux-Current
作者: Tai, Ya-Hsiang
Kuo, Yan-Fu
Lee, Yun-Hsiang
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Leakage current;photo sensitivity;poly-Si thin-film transistor (TFT)
公開日期: 1-Jan-2009
摘要: In this paper, the photosensitive effect of n-type low-temperature polycrystalline-silicon thin-film transistors (TFTs) is investigated. A novel layout is adopted to demonstrate that the photo leakage current occurs in the depletion region at the drain junction. Based on the Poole-Frenkel effect lowering of a coulombic barrier and phonon-assisted tunneling, it is discovered that the photosensitivity behavior for poly-Si TFT is dependent on the gate and drain bias. However, this photoinduced leakage current behavior is not included in the present SPICE device model. Therefore, a new parameter, unit-lux-current (ULC), is proposed to depict the photoinduced current. Its dependence on the gate/drain bias and temperature is discussed, and the equation of ULC is further derived, which has good agreement with the experimental data. A qualitative deduction is developed to account for the photo leakage mechanism. ULC variation with respect to defect states in the drain region is also discussed.
URI: http://dx.doi.org/10.1109/TED.2008.2009026
http://hdl.handle.net/11536/7954
ISSN: 0018-9383
DOI: 10.1109/TED.2008.2009026
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 56
Issue: 1
起始頁: 50
結束頁: 56
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