標題: Improving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters
作者: Yang, M. D.
Wu, S. W.
Shu, G. W.
Wang, J. S.
Shen, J. L.
Wu, C. H.
Lin, C. A. J.
Chang, W. H.
Lin, T. Y.
Lu, T. C.
Kuo, H. C.
光電工程學系
Department of Photonics
公開日期: 2009
摘要: We studied the optoelectronic properties of the InGaN/GaN multiple-quantum-well light emitting diodes (LEDs) and single-junction GaAs solar cells by introducing the luminescent Au nanoclusters. The electroluminescence intensity for InGaN/GaN LEDs increases after incorporation of the luminescent Au nanoclusters. An increase of 15.4% in energy conversion efficiency is obtained for the GaAs solar cells in which the luminescent Au nanoclusters have been incorporated. We suggest that the increased light coupling due to radiative scattering from nanoclusters is responsible for improving the performance of the LEDs and solar cells. Copyright (C) 2009 M. D. Yang et al.
URI: http://hdl.handle.net/11536/7937
http://dx.doi.org/10.1155/2009/840791
ISSN: 1687-4110
DOI: 10.1155/2009/840791
期刊: JOURNAL OF NANOMATERIALS
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