標題: Temperature-Dependent Biaxial Compressive Strain Effect on p-MOSFETs
作者: Kuo, Yuan-Jui
Chang, Ting-Chang
Dai, Chin-Hao
Chen, Shih-Ching
Lu, Jin
Ho, Sz-Han
Chao, Chien-Hsiang
Young, Tai-Fa
Cheng, Osbert
Huang, Cheng-Tung
交大名義發表
National Chiao Tung University
關鍵字: compressive strength;Ge-Si alloys;hole mobility;MOSFET;semiconductor materials;stress effects
公開日期: 2009
摘要: The influence of biaxial compressive stress on p-type metal-oxide-semiconductor field-effect transistors (MOSFETs) was investigated. It was found that drain current and hole mobility of p-type MOSFET with Si(1-x)Ge(x) raised source/drain and external applied mechanical stress significantly decreased due to the increase of effective conductive mass at room temperature. However, this phenomenon was inverted above 333 K. Because the hole can gain enough thermal energy to transmit to a higher energy level by intervalley scattering, its transport mechanism was dominated by lower effective mass at higher energy level.
URI: http://hdl.handle.net/11536/7907
http://dx.doi.org/10.1149/1.3023033
ISSN: 1099-0062
DOI: 10.1149/1.3023033
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 12
Issue: 2
起始頁: H32
結束頁: H34
Appears in Collections:Articles