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dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorChen, G. -J.en_US
dc.contributor.authorChen, H. -G.en_US
dc.contributor.authorJang, Jason S. -C.en_US
dc.contributor.authorLiao, Y. -Y.en_US
dc.contributor.authorYang, P. -F.en_US
dc.contributor.authorLai, Y. -S.en_US
dc.contributor.authorChen, M. -R.en_US
dc.contributor.authorKao, H. -L.en_US
dc.contributor.authorJuang, J. -Y.en_US
dc.date.accessioned2014-12-08T15:10:21Z-
dc.date.available2014-12-08T15:10:21Z-
dc.date.issued2010-08-01en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2010.02.050en_US
dc.identifier.urihttp://hdl.handle.net/11536/7901-
dc.description.abstractThis article reports a nanomechanical response study of the contact-induced deformation behavior in AlN thin film by using a combination of nanoindentation and the cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on Si(1 1 1) substrates by using the helicon sputtering system. The hardness and Young's modulus of the AlN thin film are measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) mode. The obtained values of hardness and Young's modulus are 24.79 +/- 0.33 GPa and 223.92 +/- 5.34 GPa, respectively. XTEM samples are prepared by using focused ion beam (FIB) milling to accurately position the cross-section of the indented area. Although the film's surface was free from fracture, AlN thin film showed evidence of radial crack along the columnar grain boundary underneath the center of Berkovich indentation for an applied load of 100 mN. XTEM results also indicated that the slip bands on {1 1 1} planes and an indentation-induced phase transformation zone of silicon substrate, containing the metastable phases of Si-III and Si-XII, and, the amorphous phases are observed. (C) 2010 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectAlNen_US
dc.subjectNanoindentationen_US
dc.subjectFocused ion beamen_US
dc.subjectCross-sectional transmission electron microscopyen_US
dc.titleCross-sectional transmission electron microscopy studies for deformation behaviors of AlN thin films under Berkovich nanoindentationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jallcom.2010.02.050en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume504en_US
dc.citation.issueen_US
dc.citation.spageS395en_US
dc.citation.epageS398en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000285252600099-
Appears in Collections:Conferences Paper


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