標題: Cross-sectional transmission electron microscopy studies for deformation behaviors of AlN thin films under Berkovich nanoindentation
作者: Jian, Sheng-Rui
Chen, G. -J.
Chen, H. -G.
Jang, Jason S. -C.
Liao, Y. -Y.
Yang, P. -F.
Lai, Y. -S.
Chen, M. -R.
Kao, H. -L.
Juang, J. -Y.
電子物理學系
Department of Electrophysics
關鍵字: AlN;Nanoindentation;Focused ion beam;Cross-sectional transmission electron microscopy
公開日期: 1-Aug-2010
摘要: This article reports a nanomechanical response study of the contact-induced deformation behavior in AlN thin film by using a combination of nanoindentation and the cross-sectional transmission electron microscopy (XTEM) techniques. AlN thin films are deposited on Si(1 1 1) substrates by using the helicon sputtering system. The hardness and Young's modulus of the AlN thin film are measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM) mode. The obtained values of hardness and Young's modulus are 24.79 +/- 0.33 GPa and 223.92 +/- 5.34 GPa, respectively. XTEM samples are prepared by using focused ion beam (FIB) milling to accurately position the cross-section of the indented area. Although the film's surface was free from fracture, AlN thin film showed evidence of radial crack along the columnar grain boundary underneath the center of Berkovich indentation for an applied load of 100 mN. XTEM results also indicated that the slip bands on {1 1 1} planes and an indentation-induced phase transformation zone of silicon substrate, containing the metastable phases of Si-III and Si-XII, and, the amorphous phases are observed. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jallcom.2010.02.050
http://hdl.handle.net/11536/7901
ISSN: 0925-8388
DOI: 10.1016/j.jallcom.2010.02.050
期刊: JOURNAL OF ALLOYS AND COMPOUNDS
Volume: 504
Issue: 
起始頁: S395
結束頁: S398
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000285252600099.pdf