|標題:||Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||annealing;metal-insulator boundaries;molybdenum;nanoelectronics;nanofabrication;nanostructured materials;passivation;plasma materials processing;random-access storage;silicon compounds;transmission electron microscopy;X-ray photoelectron spectra|
|摘要:||Mo nanocrystal memory was fabricated through annealing the oxygen-incorporated Mo and Si layers. We then investigated the influence an of ammonia plasma treatment on the nonvolatile memory characteristics of a charge storage layer composed of Mo nanocrystal memory embedded in SiO(x). Transmission electron microscopy revealed the nanostructure of the charge storage layer, and X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window reduced, and both retention and endurance improved after the treatment. The reduction in the memory window was attributed to the decrease in charge trapping centers in the surrounding oxide after the treatment. The improvement of retention was interpreted in terms of the nitrogen passivation of traps in the oxide around the Mo nanocrystals. The robust endurance characteristic was attributed to the improvement of the quality of the surrounding oxide by nitrogen passivation.|
|期刊:||JOURNAL OF THE ELECTROCHEMICAL SOCIETY|
|Appears in Collections:||Articles|
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