標題: Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma Treatment
作者: Lin, Chao-Cheng
Chang, Ting-Chang
Tu, Chun-Hao
Chen, Wei-Ren
Hu, Chih-Wei
Sze, Simon M.
Tseng, Tseung-Yuen
Chen, Sheng-Chi
Lin, Jian-Yang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: annealing;metal-insulator boundaries;molybdenum;nanoelectronics;nanofabrication;nanostructured materials;passivation;plasma materials processing;random-access storage;silicon compounds;transmission electron microscopy;X-ray photoelectron spectra
公開日期: 2009
摘要: Mo nanocrystal memory was fabricated through annealing the oxygen-incorporated Mo and Si layers. We then investigated the influence an of ammonia plasma treatment on the nonvolatile memory characteristics of a charge storage layer composed of Mo nanocrystal memory embedded in SiO(x). Transmission electron microscopy revealed the nanostructure of the charge storage layer, and X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window reduced, and both retention and endurance improved after the treatment. The reduction in the memory window was attributed to the decrease in charge trapping centers in the surrounding oxide after the treatment. The improvement of retention was interpreted in terms of the nitrogen passivation of traps in the oxide around the Mo nanocrystals. The robust endurance characteristic was attributed to the improvement of the quality of the surrounding oxide by nitrogen passivation.
URI: http://hdl.handle.net/11536/7886
http://dx.doi.org/10.1149/1.3155446
ISSN: 0013-4651
DOI: 10.1149/1.3155446
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 156
Issue: 9
起始頁: H716
結束頁: H719
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