標題: Effects of Laser Sources on Damage Mechanisms and Reverse-Bias Leakages of Laser Lift-Off GaN-Based LEDs
作者: Cheng, Ji-Hao
Wu, YewChung Sermon
Peng, Wei Chih
Ouyang, Hao
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: dislocation density;gallium compounds;III-V semiconductors;laser beam effects;light emitting diodes;semiconductor thin films
公開日期: 2009
摘要: The frequency-tripled neodymium-doped yttrium aluminum garnet laser (355 nm) and the KrF pulsed excimer laser (248 nm) were employed to separate GaN thin films from sapphire substrates and to transfer the films to bond with other substrates. The different laser lift-off processes would generate the dislocation density on different regions. In this study, the effects of these two laser sources on structural damage mechanisms and reverse-bias leakages of InGaN-GaN light-emitting diodes (LEDs) were studied.
URI: http://hdl.handle.net/11536/7884
http://dx.doi.org/10.1149/1.3148251
ISSN: 0013-4651
DOI: 10.1149/1.3148251
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 156
Issue: 8
起始頁: H640
結束頁: H643
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