標題: Perylenetetracarboxylic di-imide-based bottom-contact devices: A study on two kinds of source/drain electrodes, ITO and MoW
作者: Kao, Chia-Chun
Lin, Pang
Shen, Yu-Yuan
Yan, Jing-Yi
Ho, Jia-Chong
Lee, Cheng-Chung
Chan, Li-Hsin
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Organic thin-film transistors (OTFTs);n-Type;Perylene
公開日期: 1-Jan-2009
摘要: High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis(4-trifluoromethoxybenzyl)-perylene-3,4,9,10-tetracarboxylic di-imide, were fabricated, and the effects of crystal packing on indium tin oxide and molybdenum-tungsten alloy were shown in two different electric characteristics. The estimated work function of indium tin oxide and molybdenum-tungsten alloy were 4.7 and 5.0eV. The calculated lowest unoccupied molecular orbital energy level of the organic material was 3.7eV. Transistors with indium tin oxide bottom electrodes exhibited a high mobility of 3.37 x 10(2) cm(2) V(-1) s(1), an on/off current ratio of 6.5 x 10(5) and threshold voltage of-4.0 V. (C) 2008 Elsevier B.V All rights reserved.
URI: http://dx.doi.org/10.1016/j.synthmet.2008.08.018
http://hdl.handle.net/11536/7878
ISSN: 0379-6779
DOI: 10.1016/j.synthmet.2008.08.018
期刊: SYNTHETIC METALS
Volume: 159
Issue: 1-2
起始頁: 171
結束頁: 175
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