標題: Electrical properties of O-2 and N-2 annealed (Ba,Sr)TiO3 thin films
作者: Tsai, MS
Sun, SC
Tseng, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: BST;annealing;oxygen vacancy;leakage current
公開日期: 1-一月-1998
摘要: The dielectric constant and the leakage current of (Ba,Sr)TiO3 (BST) thin films deposited on Pt bottom electrodes before and after annealing in O-2 and N-2 ambients were investigated. The crystallinity was improved after postdeposition annealing. The refractive index, dielectric constant, and leakage current of the films were strongly dependent on the annealing conditions. The O-2-annealed BST films have higher dielectric constant and lower leakage current than those annealed in N-2 ambient.
URI: http://hdl.handle.net/11536/78
ISSN: 1058-4587
期刊: INTEGRATED FERROELECTRICS
Volume: 21
Issue: 1-4
起始頁: 173
結束頁: 183
顯示於類別:期刊論文


文件中的檔案:

  1. 000076544100017.pdf