標題: Morphology and optical properties of single- and multi-layer InAs quantum dots
作者: Hsu, Chiung-Chih
Hsu, Ray-Quen
Wu, Yue-Han
機械工程學系
材料科學與工程學系
Department of Mechanical Engineering
Department of Materials Science and Engineering
關鍵字: quantum dot;strain;scanning transmission electron microscopy;photoluminescence;reciprocal spacer mapping;fast Fourier transformation
公開日期: 1-Aug-2010
摘要: An understanding of the structural and optical properties of quantum dots (QDs) is critical for their use in optical communication devices. In this study, single- and multi-layer self-organized InAs QDs grown on (001) GaAs substrates by molecular beam epitaxy (MBE) were investigated. High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) images show that the lateral size of multi-layer InAs QDs are larger and flatter than single-layer InAs QDs, which are oval-shaped. The change in shape and size may be attributed to the presence of InGaAs spacer layers in multi-layer InAs QDs. Reciprocal spacer mapping and fast Fourier transformation images clearly show that InGaAs spacer layers present in the multi-layer InAs QDs structures help to release the strain originally existing in the QDs. In addition, the photoluminescence peak of the multi-layer InAs QDs is broader than QD in the single-layer one, which implies that the multi-layer InAs QDs size variation is more random than the single-layer one and this corresponds with the HAADF-STEM images. These results prove that spacer layers release strain influencing the morphology and optical properties of the QDs.
URI: http://dx.doi.org/10.1093/jmicro/dfq053
http://hdl.handle.net/11536/7790
ISSN: 0022-0744
DOI: 10.1093/jmicro/dfq053
期刊: JOURNAL OF ELECTRON MICROSCOPY
Volume: 59
Issue: 
起始頁: S149
結束頁: S154
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000280705200022.pdf