Title: Strain-induced effects on antiferromagnetic ordering and magnetocapacitance in orthorhombic HoMnO(3) thin films
Authors: Lin, T. H.
Shih, H. C.
Hsieh, C. C.
Luo, C. W.
Lin, J-Y
Her, J. L.
Yang, H. D.
Hsu, C-H
Wu, K. H.
Uen, T. M.
Juang, J. Y.
Department of Electrophysics
Institute of Physics
Issue Date: 14-Jan-2009
Abstract: We investigated the magnetic and ferroelectric properties of c-axis oriented orthorhombic phase HoMnO(3) (o-HMO in Pbnm symmetry setting) thin films grown on Nb-doped SrTiO(3)(001) substrates. The o-HMO films exhibit an antiferromagnetic ordering near 42 K, irrespective of the orientation of the applied field. However, an additional magnetic ordering occurring around 35 K was observed when the field was applied along the c-axis of o-HMO, which was absent when the field was applied in the ab-plane. The magnetocapacitance measured along the c-axis showed that although there is evidence of dielectric constant enhancement when the temperature is below 35 K the expected abrupt change in dielectric constant appears at a much lower temperature and reaches maximum around 13.5 K, indicating that the low-temperature c-axis polarization might be related to the ordering of the Ho(3+) moment. The lattice constant analyses using x-ray diffraction and the observation of a slight magnetization hysteresis suggest that the weak second magnetic transition along the c- axis at 35 K might be more relevant to the strain-induced effect on antiferromagnetism.
URI: http://dx.doi.org/10.1088/0953-8984/21/2/026013
ISSN: 0953-8984
DOI: 10.1088/0953-8984/21/2/026013
Volume: 21
Issue: 2
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