標題: Free carrier dynamics of InN nanorods investigated by time-resolved terahertz spectroscopy
作者: Ahn, H.
Chuang, C. -H.
Ku, Y. -P.
Pan, C. -L.
光電工程學系
Department of Photonics
關鍵字: carrier lifetime;carrier relaxation time;hot carriers;III-V semiconductors;indium compounds;nanostructured materials;narrow band gap semiconductors;semiconductor epitaxial layers;time resolved spectra;terahertz wave spectra
公開日期: 15-一月-2009
摘要: Ultrafast time-resolved terahertz spectroscopy is employed to investigate the carrier dynamics of indium nitride (InN) nanorod arrays and an epitaxial film. Transient differential transmission of terahertz wave shows that hot carrier cooling and defect-related nonradiative recombination are the common carrier relaxation processes for InN film and nanorods. However, the electrons confined in the narrow structure of nanorods are significantly affected by the carrier diffusion process near the surface, which causes the abnormally long relaxation time for nanorods.
URI: http://dx.doi.org/10.1063/1.3068172
http://hdl.handle.net/11536/7744
ISSN: 0021-8979
DOI: 10.1063/1.3068172
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 105
Issue: 2
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000262970900053.pdf