|標題:||Growth mode and novel structure of ultra-thin KCl layers on the Si(100)-2 x 1 surface|
Chung, J. Y.
Institute of Physics
|關鍵字:||Alkali halides;Silicon vgermanium;Scanning tunneling microscopy;Synchrotron radiation photoelectron spectroscopy;Epitaxy;Surface relaxation and reconstruction;Thin film structures;Semiconductor - insulator interfaces|
|摘要:||This study investigates ultra-thin potassium chloride (KCl) films on the Si(1 0 0)-2 x 1 surfaces at near room temperature. The atomic structure and growth mode of this ionic solid film on the covalent bonded semiconductor surface is examined by synchrotron radiation core level photoemission, scanning tunneling microscopy and ab initio calculations. The Si 2p, K 3p and Cl 2p core level spectra together indicate that adsorbed KCl molecules at submonolayer coverage partially dissociate and that KCl overlayers; above one monolayer (ML) have similar features in the valance band density of states as those of the bulk KCl crystal. STM results reveal a novel c(4 x 4) structure at 1 ML coverage. Ab initio calculations show that a model that comprises a periodic pyramidal geometry is consistent with experimental results. (C) 2009 Elsevier B.V. All rights reserved.|