標題: Growth mode and novel structure of ultra-thin KCl layers on the Si(100)-2 x 1 surface
作者: Tsay, S-F.
Chung, J. Y.
Hsieh, M-F.
Ferng, S-S.
Lou, C-T.
Lin, D-S.
物理研究所
Institute of Physics
關鍵字: Alkali halides;Silicon vgermanium;Scanning tunneling microscopy;Synchrotron radiation photoelectron spectroscopy;Epitaxy;Surface relaxation and reconstruction;Thin film structures;Semiconductor - insulator interfaces
公開日期: 15-一月-2009
摘要: This study investigates ultra-thin potassium chloride (KCl) films on the Si(1 0 0)-2 x 1 surfaces at near room temperature. The atomic structure and growth mode of this ionic solid film on the covalent bonded semiconductor surface is examined by synchrotron radiation core level photoemission, scanning tunneling microscopy and ab initio calculations. The Si 2p, K 3p and Cl 2p core level spectra together indicate that adsorbed KCl molecules at submonolayer coverage partially dissociate and that KCl overlayers; above one monolayer (ML) have similar features in the valance band density of states as those of the bulk KCl crystal. STM results reveal a novel c(4 x 4) structure at 1 ML coverage. Ab initio calculations show that a model that comprises a periodic pyramidal geometry is consistent with experimental results. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.susc.2008.12.010
http://hdl.handle.net/11536/7739
ISSN: 0039-6028
DOI: 10.1016/j.susc.2008.12.010
期刊: SURFACE SCIENCE
Volume: 603
Issue: 2
起始頁: 419
結束頁: 424
顯示於類別:期刊論文


文件中的檔案:

  1. 000263384500026.pdf