標題: Characteristics of In(Ga)As quantum ring infrared photodetectors
作者: Ling, H. S.
Wang, S. Y.
Lee, C. P.
Lo, M. C.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: dark conductivity;excited states;gallium arsenide;ground states;III-V semiconductors;indium compounds;infrared detectors;photoconductivity;photodetectors;quantum well devices
公開日期: 1-二月-2009
摘要: Characteristics of In(Ga)As quantum ring infrared photodetectors (QRIPs) were investigated under normal incidence configuration. Compared with quantum dot infrared photodetectors (QDIPs), QRIPs showed wider photocurrent spectra, more stable responsivity with temperature change, and lower dark current activation energy. The wide detection band comes from the transitions from the quantum ring (QR) ground states to different excited states. The shallow confinement states generate higher dark current and enhance the carrier flow between the QRs within the same QR layer. This carrier flow averages out the repulsive potential and makes QRIPs behave similarly to the quantum well infrared photodetectors instead of QDIPs. With an Al(0.27)Ga(0.73)As current blocking layer, the performance of QRIPs was greatly enhanced.
URI: http://dx.doi.org/10.1063/1.3075836
http://hdl.handle.net/11536/7708
ISSN: 0021-8979
DOI: 10.1063/1.3075836
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 105
Issue: 3
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000263409700107.pdf