|標題:||Characteristics of In(Ga)As quantum ring infrared photodetectors|
|作者:||Ling, H. S.|
Wang, S. Y.
Lee, C. P.
Lo, M. C.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||dark conductivity;excited states;gallium arsenide;ground states;III-V semiconductors;indium compounds;infrared detectors;photoconductivity;photodetectors;quantum well devices|
|摘要:||Characteristics of In(Ga)As quantum ring infrared photodetectors (QRIPs) were investigated under normal incidence configuration. Compared with quantum dot infrared photodetectors (QDIPs), QRIPs showed wider photocurrent spectra, more stable responsivity with temperature change, and lower dark current activation energy. The wide detection band comes from the transitions from the quantum ring (QR) ground states to different excited states. The shallow confinement states generate higher dark current and enhance the carrier flow between the QRs within the same QR layer. This carrier flow averages out the repulsive potential and makes QRIPs behave similarly to the quantum well infrared photodetectors instead of QDIPs. With an Al(0.27)Ga(0.73)As current blocking layer, the performance of QRIPs was greatly enhanced.|
|期刊:||JOURNAL OF APPLIED PHYSICS|