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dc.contributor.authorChien, Wei-Chihen_US
dc.contributor.authorYao, Yeong-Deren_US
dc.contributor.authorWu, Jiann-Kuoen_US
dc.contributor.authorLo, Chi-Kuenen_US
dc.contributor.authorHung, Ruei-Fengen_US
dc.contributor.authorLan, M. D.en_US
dc.contributor.authorLin, Pangen_US
dc.date.accessioned2014-12-08T15:10:05Z-
dc.date.available2014-12-08T15:10:05Z-
dc.date.issued2009-02-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3075841en_US
dc.identifier.urihttp://hdl.handle.net/11536/7706-
dc.description.abstractMagnetoimpedance behaviors and thermal effects of a Co/Cu/Co/Py pseudo-spin-valve (PSV) with a nano-oxide layer (NOL) were studied. The PSV can be regarded as a combination of resistances, inductances, and capacitances. In addition, equivalent circuit theory can be used to analyze the ac behavior of this system. The imaginary part of the magnetoimpedance (magnetoreactance) ratio is more than 1700% at the resonance frequency (f(r))=476 kHz at room temperature (R(T)). The dc magnetoresistance (MR) ratio decreases as the annealing temperature increases because the NOL is formed at the interface between the spacer and the magnetic layer. The NOL deteriorates the differential spin scattering and reduces the dc MR ratio. Impedance spectroscopy was utilized to analyze the capacitance effect from NOL after annealing. The effective capacitance of the PSV was 21.8 nF at R(T) and changed to 11.8 nF after annealing at 200 degrees C. The useful equivalent capacitor circuit not only is a nondestructive measurement technology but can also explain the experimental results and prove the formation of the NOL.en_US
dc.language.isoen_USen_US
dc.subjectannealingen_US
dc.subjectcobalten_US
dc.subjectcopperen_US
dc.subjectequivalent circuitsen_US
dc.subjectgiant magnetoresistanceen_US
dc.subjectinductanceen_US
dc.subjectPermalloyen_US
dc.subjectspin valvesen_US
dc.titleMagnetoimpedance behavior and its equivalent circuit analysis of Co/Cu/Co/Py pseudo-spin-valve with a nano-oxide layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3075841en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume105en_US
dc.citation.issue3en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000263409700070-
dc.citation.woscount3-
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