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dc.contributor.authorLin, S. H.en_US
dc.contributor.authorHsiao, Y-Nen_US
dc.contributor.authorHsu, K. Y.en_US
dc.date.accessioned2014-12-08T15:10:05Z-
dc.date.available2014-12-08T15:10:05Z-
dc.date.issued2009-02-01en_US
dc.identifier.issn1464-4258en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1464-4258/11/2/024012en_US
dc.identifier.urihttp://hdl.handle.net/11536/7705-
dc.description.abstractThis paper presents the development of a thick photopolymer for holographic data storage at a wavelength of 532 nm. Irgacure 784, one kind of the titanocene photoinitiators, has been selected and doped to synthesize the photopolymers in this research. Using a two-step thermo-polymerization procedure two photopolymer samples have been fabricated, Irgacure 784 doped poly(methyl methacrylate) (PMMA) and Irgacure 784 doped epoxy resin. Samples of 2 mm thick have been fabricated. Holographic measurements show that Irgacure 784 doped epoxy resin is very sensitive at 532 nm and that it is capable of supporting holographic data storage at a ultra-fast recording rate of 760 Mb s(-1). Mass spectrum measurement, solid state 1H-NMR spectrum measurement, and thermogravity analyses (TGA) have been performed. The results reveal the physical mechanism of holographic recording in these samples, providing a guideline for a design strategy and fabrication technique to produce a low-shrinkage recording material for holographic data storage in the tera-byte information age.en_US
dc.language.isoen_USen_US
dc.subjectholographyen_US
dc.subjectvolume holographic materialen_US
dc.subjectphotopolymeren_US
dc.subjectpoly(methyl methacrylate)en_US
dc.subjectepoxy resinen_US
dc.titlePreparation and characterization of Irgacure 784 doped photopolymers for holographic data storage at 532 nmen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/1464-4258/11/2/024012en_US
dc.identifier.journalJOURNAL OF OPTICS A-PURE AND APPLIED OPTICSen_US
dc.citation.volume11en_US
dc.citation.issue2en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000262584300013-
dc.citation.woscount4-
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