標題: Effects of thermal annealing on the emission properties of type-II InAs/GaAsSb quantum dots
作者: Liao, Yu-An
Hsu, Wei-Ting
Chiu, Pei-Chin
Chyi, Jen-Inn
Chang, Wen-Hao
電子物理學系
Department of Electrophysics
關鍵字: gallium arsenide;gallium compounds;III-V semiconductors;indium compounds;localised states;photoluminescence;radiative lifetimes;rapid thermal annealing;semiconductor quantum dots;spectral line narrowing;spectral line shift;time resolved spectra
公開日期: 2-Feb-2009
摘要: We report the effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs(1-x)Sb(x) layer. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAsSb layer. Evidences of the evolution from type-II to type-I band alignments are obtained from time-resolved and power-dependent photoluminescence measurements. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAsSb type-II QDs.
URI: http://dx.doi.org/10.1063/1.3062979
http://hdl.handle.net/11536/7646
ISSN: 0003-6951
DOI: 10.1063/1.3062979
期刊: APPLIED PHYSICS LETTERS
Volume: 94
Issue: 5
結束頁: 
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