Title: Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor deposition
Authors: Tsai, Wen-Che
Lin, Feng-Yi
Ke, Wen-Cheng
Lu, Shu-Kai
Cheng, Shun-Jen
Chou, Wu-Ching
Chen, Wei-Kuo
Lee, Ming-Chih
Chang, Wen-Hao
電子物理學系
Department of Electrophysics
Keywords: finite element analysis;gallium compounds;III-V semiconductors;indium compounds;internal stresses;island structure;MOCVD;Raman spectra;wide band gap semiconductors
Issue Date: 9-Feb-2009
Abstract: We report Raman measurements on InN islands grown on GaN by metalorganic chemical vapor deposition. The Raman frequency of the InN E(2) mode is found to decrease exponentially with the island's aspect ratio, indicating a size dependent strain relaxation during the island formation. Our results suggest that most of the strain at the InN-GaN interface have been released plastically during the initial stage of island formations. After that, the residual strain of only -3.5x10(-3) is further relaxed elastically via surface islanding. The experimental data are in agreement with the strain relaxation predicted from a simplified model analysis as well as three-dimensional finite-element simulations.
URI: http://dx.doi.org/10.1063/1.3064166
http://hdl.handle.net/11536/7643
ISSN: 0003-6951
DOI: 10.1063/1.3064166
Journal: APPLIED PHYSICS LETTERS
Volume: 94
Issue: 6
End Page: 
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