|標題:||Improved reliability of Mo nanocrystal memory with ammonia plasma treatment|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||molybdenum;nanostructured materials;passivation;plasma materials processing;random-access storage;reliability;silicon compounds;stoichiometry;X-ray photoelectron spectra|
|摘要:||We investigated ammonia plasma treatment influence on the nonvolatile memory characteristics of the charge storage layer composed of Mo nanocrystals embedded in nonstoichiometry oxide (SiO(x)). X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window was reduced and the retention and the endurance improved after the treatment. The reduction in the memory window and the improvement in retention were interpreted in terms of the nitrogen passivation of traps in the oxide around Mo nanocrystals. The robust endurance characteristic was attributed the improvement of the quality of the surrounding oxide by nitrogen passivation.|
|期刊:||APPLIED PHYSICS LETTERS|