標題: Improved reliability of Mo nanocrystal memory with ammonia plasma treatment
作者: Lin, Chao-Cheng
Chang, Ting-Chang
Tu, Chun-Hao
Chen, Wei-Ren
Hu, Chih-Wei
Sze, Simon M.
Tseng, Tseung-Yuen
Chen, Sheng-Chi
Lin, Jian-Yang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: molybdenum;nanostructured materials;passivation;plasma materials processing;random-access storage;reliability;silicon compounds;stoichiometry;X-ray photoelectron spectra
公開日期: 9-二月-2009
摘要: We investigated ammonia plasma treatment influence on the nonvolatile memory characteristics of the charge storage layer composed of Mo nanocrystals embedded in nonstoichiometry oxide (SiO(x)). X-ray photoelectron spectra analyses revealed that nitrogen was incorporated into the charge storage layer. Electric analyses indicated that the memory window was reduced and the retention and the endurance improved after the treatment. The reduction in the memory window and the improvement in retention were interpreted in terms of the nitrogen passivation of traps in the oxide around Mo nanocrystals. The robust endurance characteristic was attributed the improvement of the quality of the surrounding oxide by nitrogen passivation.
URI: http://dx.doi.org/10.1063/1.3081021
http://hdl.handle.net/11536/7641
ISSN: 0003-6951
DOI: 10.1063/1.3081021
期刊: APPLIED PHYSICS LETTERS
Volume: 94
Issue: 6
結束頁: 
顯示於類別:期刊論文


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