標題: NiSiGe nanocrystals for nonvolatile memory devices
作者: Hu, Chih-Wei
Chang, Ting-
Tu, Chun-Hao
Chiang, Cheng-Neng
Lin, Chao-Cheng
Sze, Simon M.
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: aggregates (materials);Ge-Si alloys;nanostructured materials;nickel alloys;nucleation;Raman spectra;random-access storage;thin films;transmission electron microscopy;X-ray photoelectron spectra
公開日期: 9-二月-2009
摘要: In this work, charge-storage characteristics of NiSiGe nanocrystal memory device have been studied. Transmission electron microscope shows that the annealed NiSiGe film has higher nanocrystal size and density distribution. Related material analyses such as x-ray photoelectron spectroscopy, Raman spectroscopy, and energy dispersive spectrometer were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystals aggregation during thermal process. With the improved nanocrystal formation process, a remarkable improvement of the memory effect is observed by comparing the NiSi and NiSiGe nanocrystals. In addition, the retention characteristics of the nanocrystals memory devices have been discussed.
URI: http://dx.doi.org/10.1063/1.3080201
http://hdl.handle.net/11536/7640
ISSN: 0003-6951
DOI: 10.1063/1.3080201
期刊: APPLIED PHYSICS LETTERS
Volume: 94
Issue: 6
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000263409400050.pdf