|標題:||NiSiGe nanocrystals for nonvolatile memory devices|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|關鍵字:||aggregates (materials);Ge-Si alloys;nanostructured materials;nickel alloys;nucleation;Raman spectra;random-access storage;thin films;transmission electron microscopy;X-ray photoelectron spectra|
|摘要:||In this work, charge-storage characteristics of NiSiGe nanocrystal memory device have been studied. Transmission electron microscope shows that the annealed NiSiGe film has higher nanocrystal size and density distribution. Related material analyses such as x-ray photoelectron spectroscopy, Raman spectroscopy, and energy dispersive spectrometer were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystals aggregation during thermal process. With the improved nanocrystal formation process, a remarkable improvement of the memory effect is observed by comparing the NiSi and NiSiGe nanocrystals. In addition, the retention characteristics of the nanocrystals memory devices have been discussed.|
|期刊:||APPLIED PHYSICS LETTERS|