標題: Degradation Mechanism of Poly-Si TFTs Dynamically Operated in OFF Region
作者: Tai, Ya-Hsiang
Huang, Shih-Che
Chen, Po-Ting
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: AC stress;dynamic stress;poly-Si thin-film transistors (TFTs);reliability
公開日期: 1-Mar-2009
摘要: This letter reports the study of the reliability behavior of poly-Si thin-film transistors (TFTs) with the pulsed gate voltage lower than the threshold voltage. First, the equivalent circuit model for poly-Si TFT is proposed. Considering the voltage drop for each element in the circuit model during the OFF-region gate dynamic stress, it is proposed that the main voltage drop occurs at the source and drain junctions, which could in turn degrade the device during stress. Based on this assumption, the gated p-i-n device fabricated on the same glass with the identical process conditions is stressed and analyzed. The similarity between the capacitance curves of the TFTs and gated p-i-n devices after stress proves that the main reason for degradation of poly-Si TFTs under gate OFF region ac stress is the large Voltage drop across the source and drain junctions.
URI: http://dx.doi.org/10.1109/LED.2008.2010784
http://hdl.handle.net/11536/7553
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2010784
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 3
起始頁: 231
結束頁: 233
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