Title: Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile Strain
Authors: Chang, Chia-Ta
Hsiao, Shih-Kuang
Chang, Edward Yi
Lu, Chung-Yu
Huang, Jui-Chien
Lee, Ching-Ting
材料科學與工程學系
Department of Materials Science and Engineering
Keywords: AlGaN/GaN;gate orientations;high-electron mobility transistors (HEMTs);transient current;uniaxial tensile strain
Issue Date: 1-Mar-2009
Abstract: This letter investigates the characteristics of unpassivated AlGaN/GaN high-electron mobility transistors (HEMTs) under uniaxial tensile strain. Mechanical stress can produce additional charges that change the HEMT channel current. is phenomenon is dependent upon gate orientation and may be the result of the piezoelectric effect and changes in electron mobility due to the applied uniaxial stress. In addition, results show that tensile strain reduces the transient current, which is, likely due to the additional donorlike surface states created through the piezoelectric effect.
URI: http://dx.doi.org/10.1109/LED.2009.2012447
http://hdl.handle.net/11536/7552
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2012447
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 3
Begin Page: 213
End Page: 215
Appears in Collections:Articles


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