標題: The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxy
作者: Wong, Yuen-Yee
Chang, Edward Yi
Yang, Tsung-Hsi
Chang, Jet-Rung
Chen, Yi-Cheng
Ku, Jui-Tai
Lee, Ching-Ting
Chang, Chun-Wei
材料科學與工程學系
電子工程學系及電子研究所
友訊交大聯合研發中心
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
D Link NCTU Joint Res Ctr
關鍵字: Defects;High-resolution X-ray diffraction;Molecular beam epitaxy;Gallium nitride
公開日期: 1-Mar-2009
摘要: The defect structure of GaN film grown on sapphire by plasma-assisted molecular beam epitaxy (PAMBE) depends on the growth temperature and thickness of the aluminum nitride (AlN) buffer layer. High-resolution X-ray diffraction was used to measure symmetric (0 0 0 2) and asymmetric (1 0 (1) over bar 2) rocking curve (omega-scans) broadening, which allowed the estimation of screw threading dislocation (TD) and edge TD densities, respectively. For GaN grown on lower-temperature buffer, the density of screw TD was increased while the density of edge TD was decreased. Further examinations revealed that the edge TD was closely related to stress in GaN film and the screw TD was controlled by AlN surface roughness. Since the GaN defect was dominated by edge TD, the total TD was also effectively suppressed with the use of lower-temperature buffer with appropriate thickness. (C) 2009 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2008.12.051
http://hdl.handle.net/11536/7550
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2008.12.051
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 311
Issue: 6
起始頁: 1487
結束頁: 1492
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