標題: Conduction at domain walls in oxide multiferroics
作者: Seidel, J.
Martin, L. W.
He, Q.
Zhan, Q.
Chu, Y. -H.
Rother, A.
Hawkridge, M. E.
Maksymovych, P.
Yu, P.
Gajek, M.
Balke, N.
Kalinin, S. V.
Gemming, S.
Wang, F.
Catalan, G.
Scott, J. F.
Spaldin, N. A.
Orenstein, J.
Ramesh, R.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Mar-2009
摘要: Domain walls may play an important role in future electronic devices, given their small size as well as the fact that their location can be controlled. Here, we report the observation of room-temperature electronic conductivity at ferroelectric domain walls in the insulating multiferroic BiFeO(3). The origin and nature of the observed conductivity are probed using a combination of conductive atomic force microscopy, high-resolution transmission electron microscopy and first-principles density functional computations. Our analyses indicate that the conductivity correlates with structurally driven changes in both the electrostatic potential and the local electronic structure, which shows a decrease in the bandgap at the domain wall. Additionally, we demonstrate the potential for device applications of such conducting nanoscale features.
URI: http://dx.doi.org/10.1038/nmat2373
http://hdl.handle.net/11536/7519
ISSN: 1476-1122
DOI: 10.1038/nmat2373
期刊: NATURE MATERIALS
Volume: 8
Issue: 3
起始頁: 229
結束頁: 234
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