Title: AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO(4) laser
Authors: Huang, S. C.
Chang, H. L.
Su, K. W.
Li, A.
Liu, S. C.
Chen, Y. F.
Huang, K. F.
Department of Electrophysics
Issue Date: 1-Mar-2009
Abstract: An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.
URI: http://dx.doi.org/10.1007/s00340-008-3346-2
ISSN: 0946-2171
DOI: 10.1007/s00340-008-3346-2
Volume: 94
Issue: 3
Begin Page: 483
End Page: 487
Appears in Collections:Articles