Title: Physical properties of amorphous InGaZnO(4) films doped with Mn
Authors: Liu, Shiu-Jen
Fang, Hau-Wei
Su, Shih-Hao
Li, Chia-Hung
Cherng, Jyh-Shiarn
Hsieh, Jang-Hsing
Juang, Jenh-Yih
Department of Electrophysics
Issue Date: 2-Mar-2009
Abstract: Amorphous InGaZnO(4) (a-IGZO) films doped with various concentrations of Mn have been fabricated by using pulsed-laser deposition technique. Optical, electrical, and magnetic properties of the prepared Mn-doped a-IGZO films were investigated. The resistivity, carrier concentration, and carrier mobility of the a-IGZO films were found to be, respectively, increased, decreased, and enhanced by Mn doping. Moreover, the optical transmission is slightly increased in the visible range and the optical band gaps are not affected in the Mn-doped films. Room-temperature ferromagnetism has been observed in the field-dependent magnetization measurements.
URI: http://dx.doi.org/10.1063/1.3095505
ISSN: 0003-6951
DOI: 10.1063/1.3095505
Volume: 94
Issue: 9
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Appears in Collections:Articles