標題: Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memory
作者: Hu, Chih-Wei
Chang, Ting-Chang
Tu, Chun-Hao
Shueh, Pei-Kun
Lin, Chao-Cheng
Sze, Simon M.
Tseng, Tseung-Yuen
Chen, Min-Chen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: annealing;cobalt compounds;nanofabrication;oxidation;protective coatings;random-access storage;sputtering;transmission electron microscopy;X-ray photoelectron spectra
公開日期: 9-三月-2009
摘要: Co nanodot memory devices formed by oxidation processes were studied. Transmission electron microscopy and x-ray photoelectron spectroscopy analyses showed that overoxidation of the cobalt and silicon degraded the charge-storage ability seriously. However, a precapped oxide can mildly oxidize the CoSi(2) film to protect the overoxidation to occur. In addition, an oxygen-incorporated CoSi(2) film is proposed to improve the oxidation process further. Through incorporating the limited oxygen during sputtering process, the Co nanodot memory device obtains a larger memory window. Also, the reliability characteristic of the Co nanodot memory device formed by annealing the oxygen-incorporated CoSi(2) film has been demonstrated.
URI: http://dx.doi.org/10.1063/1.3097810
http://hdl.handle.net/11536/7495
ISSN: 0003-6951
DOI: 10.1063/1.3097810
期刊: APPLIED PHYSICS LETTERS
Volume: 94
Issue: 10
結束頁: 
顯示於類別:期刊論文


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  1. 000264280000042.pdf