標題: Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K
作者: Chiu, Shao-Pin
Chung, Hui-Fang
Lin, Yong-Han
Kai, Ji-Jung
Chen, Fu-Rong
Lin, Juhn-Jong
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 11-三月-2009
摘要: Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few mu m long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Gruneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.
URI: http://dx.doi.org/10.1088/0957-4484/20/10/105203
http://hdl.handle.net/11536/7492
ISSN: 0957-4484
DOI: 10.1088/0957-4484/20/10/105203
期刊: NANOTECHNOLOGY
Volume: 20
Issue: 10
結束頁: 
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