標題: Enhanced field-effect mobility in pentacene based organic thin-film transistors on polyacrylates
作者: Cheng, Jung-An
Chuang, Chiao-Shun
Chang, Ming-Nung
Tsai, Yun-Chu
Shieh, Han-Ping D.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: buffer layers;grain size;high-k dielectric thin films;hole traps;organic field effect transistors;organic semiconductors;polymer films;thin film transistors
公開日期: 15-Mar-2009
摘要: We reported on organic thin-film transistors (OTFTs) with high dielectric constant polymer, poly(2,2,2-trifluoroethyl methacrylate) (PTFMA), as the gate dielectric. In top-contact OTFTs, the field-effect mobility was enhanced by applying a dielectric buffer layer poly(alpha-methylstyrene) to the bare PTFMA. After improving interfacial affinity within the active layer/dielectrics, deposited pentacene grain size and device performance were enhanced dramatically. The corresponding mobility, threshold voltage, and on/off current ratio were 0.70 cm(2) V(-1) s(-1), -10.5 V, and 5.4x10(5), respectively. The moderately improved interface also suppressed the hole-trapping effect, which led to less hysteresis and minimized threshold voltage shift.
URI: http://dx.doi.org/10.1063/1.3075873
http://hdl.handle.net/11536/7485
ISSN: 0021-8979
DOI: 10.1063/1.3075873
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 105
Issue: 6
結束頁: 
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