標題: Phase-change memory devices based on gallium-doped indium oxide
作者: Wang, S. -L.
Chen, C. -Y.
Hsieh, M. -K.
Lee, W. -C.
Kung, A. H.
Peng, L. -H.
光電工程學系
Department of Photonics
關鍵字: crystallisation;gallium;indium compounds;phase change memories;solid-state phase transformations
公開日期: 16-Mar-2009
摘要: We report repetitive phase-change memory (PCM) activity via the high- to low-resistance state transition in gallium-doped indium oxide (Ga:InO) induced by nanosecond electric pulses. The amorphous-to-crystalline phase transition of Ga:InO is found to occur at a crystallization temperature of similar to 250 degrees C with an activation energy of 1.27 +/- 0.07 eV. At the phase transition, we observe a change in two orders of magnitude in the PCM-device resistance, which can be correlated with the formation of (211) and {222} crystallites of bixbyite cubic In(2)O(3). We ascribe the phase-change mechanism to the Joule heating effect in Ga:InO.
URI: http://dx.doi.org/10.1063/1.3089238
http://hdl.handle.net/11536/7475
ISSN: 0003-6951
DOI: 10.1063/1.3089238
期刊: APPLIED PHYSICS LETTERS
Volume: 94
Issue: 11
結束頁: 
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