The Study of Simulation InAlAs/InAs/InGaAs System for InP High Electron Mobility Transistor
In my research thesis, to study high frequency of characteristics InAlAs / InGaAs/InP pHEMT have been simulated by using Silvaco software. The main objective of research is to study the effects of variations of supply layer thicknesses and then it has optimization to change the device structure. The important of DC and RF parameters such as drain current, transconductance and current gain cut off frequency are extracted from these simulation results which that device material exhibits optimized performance. However, the simulation device of true meaning is necessary to understand the device characteristics and then can find suitable models to simulate device, furthermore, to make calibration of the model parameters could match simulated results with the measured results. It is important to develop the InAlAs / InGaAs /InP systems device with considerable assistance and contribution in the future.