標題: Pulse-IV Characterization of Charge-Transient Behavior of SONOS-Type Devices With or Without a Thin Tunnel Oxide
作者: Du, Pei-Ying
Lue, Hang-Ting
Wang, Szu-Yu
Huang, Tiaci-Yuan
Hsieh, Kuang-Yeu
Liu, Rich
Lu, Chih-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Gate injection;pulse-IV method;SONOS;SONS;transient behavior
公開日期: 1-Apr-2009
摘要: The transient behavior of SONOS-type devices was investigated for the first time using pulse-IV technique. Three kinds of SONOS devices are studied: SONS (without top oxide), SONoS (with a thin top oxide), and SoNOS (with a thin bottom oxide). Devices with or without a thin tunnel oxide were able to provide very fast charge injection/detrapping, but their charge-transient behavior cannot be accurately monitored by conventional DC-IV method. By using specific pulse-IV setup for memory, we can measure the drain current response immediately after programming and erasing, as well as the fast charge relaxation under various reliability tests. The program and erase transient behavior shows that all devices are easily programmed and erased within 1 mu s at low gate voltages (< 6 V). Moreover, SONS shows the fastest program and erase speeds because of the absence of tunnel oxide, and silicon nitride has very low barrier height that offers fast injection. We have also examined the charge relaxation under various field and temperature conditions and found that the charge loss mainly came from external charge injection during retention, not from detrapping through thermionic emission.
URI: http://dx.doi.org/10.1109/LED.2009.2012730
http://hdl.handle.net/11536/7451
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2012730
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 4
起始頁: 380
結束頁: 382
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