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dc.contributor.authorHsueh, Tao-Hungen_US
dc.contributor.authorSheu, Jinn-Kongen_US
dc.contributor.authorLai, Wei-Chien_US
dc.contributor.authorWang, Yi-Tingen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:09:42Z-
dc.date.available2014-12-08T15:09:42Z-
dc.date.issued2009-04-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2009.2012872en_US
dc.identifier.urihttp://hdl.handle.net/11536/7426-
dc.description.abstractThis study demonstrated the enhancement of the light output power of InGaN-GaN multiple quantum-well light-emitting diodes (LEDs) that are grown with a pulsed-trimethylindium (pulsed-TMIn) How process by metal-organic vapor-phase epitaxy. At an injection current of 20 mA, the output power of the pulsed-TMIn treated LEDs was improved by 16% as compared to that of the conventional LEDs. In addition, a minor droop (versus injection current) in terms. of external quantum efficiency was also observed in the pulsed-TMIn treated LEDs as compared to conventional LEDs. This improvement could be attributed to the fact that the significant carrier localization effect in the pulsed-TMIn treated LEDs can lead to higher recombination efficiency. This contention is perhaps tentatively evidenced by the temperature-dependent photoluminescence results in which the activation energy of the pulsed-TMIn treated LEDs was increased by 21.8% as compared to that of conventional LEDs.en_US
dc.language.isoen_USen_US
dc.subjectExternal quantum efficiency (EQE)en_US
dc.subjectGaN light-emitting diode (LED)en_US
dc.subjectmultiple quantum-well (MQW)en_US
dc.subjectpulsed-trimethylindium (pulsed-TMIn)en_US
dc.titleImprovement of the Efficiency of InGaN-GaN Quantum-Well Light-Emitting Diodes Grown With a Pulsed-Trimethylindium Flow Processen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2009.2012872en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume21en_US
dc.citation.issue7en_US
dc.citation.spage414en_US
dc.citation.epage416en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000266054700002-
dc.citation.woscount3-
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