標題: Improvement of the Efficiency of InGaN-GaN Quantum-Well Light-Emitting Diodes Grown With a Pulsed-Trimethylindium Flow Process
作者: Hsueh, Tao-Hung
Sheu, Jinn-Kong
Lai, Wei-Chi
Wang, Yi-Ting
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: External quantum efficiency (EQE);GaN light-emitting diode (LED);multiple quantum-well (MQW);pulsed-trimethylindium (pulsed-TMIn)
公開日期: 1-Apr-2009
摘要: This study demonstrated the enhancement of the light output power of InGaN-GaN multiple quantum-well light-emitting diodes (LEDs) that are grown with a pulsed-trimethylindium (pulsed-TMIn) How process by metal-organic vapor-phase epitaxy. At an injection current of 20 mA, the output power of the pulsed-TMIn treated LEDs was improved by 16% as compared to that of the conventional LEDs. In addition, a minor droop (versus injection current) in terms. of external quantum efficiency was also observed in the pulsed-TMIn treated LEDs as compared to conventional LEDs. This improvement could be attributed to the fact that the significant carrier localization effect in the pulsed-TMIn treated LEDs can lead to higher recombination efficiency. This contention is perhaps tentatively evidenced by the temperature-dependent photoluminescence results in which the activation energy of the pulsed-TMIn treated LEDs was increased by 21.8% as compared to that of conventional LEDs.
URI: http://dx.doi.org/10.1109/LPT.2009.2012872
http://hdl.handle.net/11536/7426
ISSN: 1041-1135
DOI: 10.1109/LPT.2009.2012872
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 21
Issue: 7
起始頁: 414
結束頁: 416
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