標題: Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation
作者: Hu, Vita Pi-Ho
Wu, Yu-Sheng
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-2009
摘要: The electrostatic integrity for UTB GeOI MOSFETs is examined comprehensively by using an analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (L(g)) to channel thickness (T(ch)) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of the buried oxide thickness (T(BOX)) and back-gate bias (V(back-gate)) on the electrostatic integrity of GeOI devices is also examined.
URI: http://dx.doi.org/10.1088/0268-1242/24/4/045017
http://hdl.handle.net/11536/7422
ISSN: 0268-1242
DOI: 10.1088/0268-1242/24/4/045017
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 24
Issue: 4
結束頁: 
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