標題: The design of a 3-V 900-MHz CMOS bandpass amplifier
作者: Wu, CY
Hsiao, SY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: bandpass amplifier;bandpass filter;CMOS technology;integrated inductor;low-noise amplifier;mobile communication;radio frequency;wireless receiver
公開日期: 1-二月-1997
摘要: A new bandpass amplifier which performs both functions of low-noise amplifier (LNA) and bandpass filter (BPF) is proposed for the application of 900-MHz RF front-end in wireless receivers, In the proposed amplifier, the positive-feedback Q-enhancement technique is used to overcome the low-gain low-Q characteristics of the CMOS tuned amplifier, The Miller capacitance tuning scheme is used to compensate for the process variations of center frequency, Using the high-Q bandpass amplifier in the receivers, the conventional bulky off-chip filter is not required, An experimental chip fabricated by 0.8-mu m N-well double-poly-double-metal CMOS technology occupies 2.6 x 2.0 mm(2) chip area, Under a 3 V supply voltage, the measured quality factor is tunable between 2.2 and 44. When the quality factor is tuned at Q = 30, the measured center frequency of the amplifier is tunable between 869-893 MHz with power gain 17 dB, noise figure 6.0 dB, output 1 dB compression point at -30 dBm, third-order input intercept point at -14 dBm, and power dissipation 78 mW.
URI: http://dx.doi.org/10.1109/4.551907
http://hdl.handle.net/11536/740
ISSN: 0018-9200
DOI: 10.1109/4.551907
期刊: IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume: 32
Issue: 2
起始頁: 159
結束頁: 168
顯示於類別:期刊論文


文件中的檔案:

  1. A1997WE53900003.pdf