標題: 矽磊晶製程表面微粒污染減量之研究
Research on the surface of silicon epitaxial process of particle pollution reduction
作者: 柯泓昇
Ko, Hung-Sheng
張立
工學院半導體材料與製程設備學程
關鍵字: 矽磊晶製程表面微粒污染減量之研究;Research on the surface of silicon epitaxial process of particle pollution reduction
公開日期: 2013
摘要: 半導體製造中,磊晶為關鍵製程之ㄧ;矽晶半導體磊晶製程經過多年的穩定發展,生產製程條件逐步穩定,近年在元件縮小,磊晶產品良率仍需更進一步的提升。本研究中磊晶製程改善在主要著重於拋光後之晶圓片後續以氣體沉積長晶的製程良率狀況,由磊晶製程條件進行討論,並且以造成最多產品良率損失的微粒汙染進行良率提升改善。本論文研究於量產磊晶機台中,導入HCl氣體清除磊晶表面微粒,獲致良好的產品良率提升的效果,並且使得產品檢出損失降至環境背景值以下。並且在烘烤步驟導入HCl氣體處理進行生產條件之試驗,找出最佳的製程條件,足以提供相關製程良率提升對策之參考。
Among semiconductor fabrication of Si devices, epitaxy is one of the most critical processes. After many years of development of the epitaxial (EPI) process of semiconductors, production conditions gradually stabilized in recent years. Due to the shrinkage of the devices, it still needs to further improvement on the product yield. This study focuses on EPI process particle issue improvement. In this study, improvement in the EPI process focuses mainly on the cleaning of wafer after polishing up to the vapor deposition process to yield crystal growth conditions, the EPI process conditions discussed, and with a maximum product yield loss caused by particle pollution reduction for yield enhancement. This thesis that is on AMAT machines imported HCl gas to purge EPI surface particles, and attainable good product yield enhancement, and makes the product detected in losses lower than environmental background value. BAKE import and HCl gas processing production test, to find the best process conditions, and that is enough to provide process yield enhancing domestic reference countermeasures.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079875510
http://hdl.handle.net/11536/73914
顯示於類別:畢業論文