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dc.contributor.authorLee, Ya-Juen_US
dc.contributor.authorLin, Shawn-Yuen_US
dc.contributor.authorChiu, Ching-Huaen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorChhajed, Sameeren_US
dc.contributor.authorKim, Jong Kyuen_US
dc.contributor.authorSchubert, E. Freden_US
dc.date.accessioned2014-12-08T15:09:38Z-
dc.date.available2014-12-08T15:09:38Z-
dc.date.issued2009-04-06en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3119192en_US
dc.identifier.urihttp://hdl.handle.net/11536/7375-
dc.description.abstractHere we propose and realize a scheme for making a direct contact to a two-dimensional nanorod light-emitting diode (LED) array using the oblique-angle deposition approach. And, more importantly, we demonstrate highly efficient electrical carrier injection into the nanorods. As a result, we show that at a 20 mA dc current injection, the light output power density of our nanorod LED array is 3700 mW cm(-2). More general, this contact scheme will pave the ways for making direct contacts to other kinds of nanoscale optoelectronic devices.en_US
dc.language.isoen_USen_US
dc.subjectgallium compoundsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectlight emitting diodesen_US
dc.subjectnanofabricationen_US
dc.subjectnanophotonicsen_US
dc.subjectvapour depositionen_US
dc.subjectwide band gap semiconductorsen_US
dc.titleHigh output power density from GaN-based two-dimensional nanorod light-emitting diode arraysen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3119192en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume94en_US
dc.citation.issue14en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000265083700011-
dc.citation.woscount28-
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