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dc.contributor.authorYu, Peichenen_US
dc.contributor.authorChang, Chia-Huaen_US
dc.contributor.authorChiu, Ching-Huaen_US
dc.contributor.authorYang, Chin-Shengen_US
dc.contributor.authorYu, Jue-Chinen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHsu, Shih-Hsinen_US
dc.contributor.authorChang, Yia-Chungen_US
dc.date.accessioned2014-12-08T15:09:36Z-
dc.date.available2014-12-08T15:09:36Z-
dc.date.issued2009-04-27en_US
dc.identifier.issn0935-9648en_US
dc.identifier.urihttp://dx.doi.org/10.1002/adma.200802563en_US
dc.identifier.urihttp://hdl.handle.net/11536/7341-
dc.description.abstractHighly-oriented indium tin oxide nano-columns are prepared by glancing-angle deposition with nitrogen. The tapered column profiles, which function as a graded-refiractive-index layer, offer superior antireflective characteristics. The nano-structured material serves as the conductive antireflective layer for GaAs solar cells, demonstrating a viable efficiency-boosting strategy for next-generation photovoltaics.en_US
dc.language.isoen_USen_US
dc.titleEfficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumnsen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adma.200802563en_US
dc.identifier.journalADVANCED MATERIALSen_US
dc.citation.volume21en_US
dc.citation.issue16en_US
dc.citation.spage1618en_US
dc.citation.epage+en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000265950500016-
dc.citation.woscount99-
Appears in Collections:Articles


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