標題: 金屬導線與接觸層對低溫沉積碳奈米材料的影響
Effect of metal wire and upperlying contact film on the deposition of carbon nanomaterials at low temperature
作者: 黃廉育
Huang, Lian-Yu
林志忠
物理研究所
關鍵字: 碳奈米材料;接觸層;熱預處理;表面處理;carbon nanomaterials;contact film;thermal pretreatment;surface treatment
公開日期: 2012
摘要: 本實驗目的為在不大於400 °C 的製程溫度,製作碳奈米材料引洞內連線。沉積參數為溫度400 °C、壓力15 torr、氣體流量Ar/H2/Are (Are : 酒精蒸氣之載氣流量)分別為340/50/110 sccm、及成長時間15分鐘,在Ti或TiN未經表面處理的基板,可成長出碳奈米纖維。 我們發現在Ta金屬導線上以Al/TiN 或TaN/TiN為雙層接觸層,能提升碳奈米纖維的成長。其中雙層接觸層Al/TiN中的Al,有部分形成AlOx,,而降低TiN的表面能,促進碳奈米纖維的成長。 在我們結果中顯示,Ti或TiN接觸層經過氨水-過氧化氫混和溶液處理、鹽酸-硝酸溶液處理,能促進碳奈米材料的成長且為中空結構的碳奈米管。 X射線光電子能譜分析顯示,上述Ti或TiN接觸層經過表面處理,可能產生鎳金屬的衍化物,增進鎳催化劑與接觸層的交互作用,促進400 °C下成長碳奈米材料。
The purpose of this study is to fabricate the carbon nanomaterials (CNMs) via interconnects at temperatures not larger than 400°C. Carbon nanofibers (CNFs) were grown on the as-deposited Ti or TiN contact film with the following conditions: temperature = 400°C, pressure = 15 torr, gas flow rates = 340/50/110 sccm for Ar/H2/Are (carrier gas of ethanol vapor), growth time = 15 minutes, respectively. We found that the growth of CNFs can be promoted by using bilayer contact film of Al/TiN or TaN/TiN on top of the Ta wire, probably due to the reduction of the surface energy of TiN film by the introduction of Al/TiN bilayer derived from the AlOx layer. We also found that the surface treatment of Ti or TiN contact film can further increase the interaction between the Ni catalyst and underlying Ti/TiN film and promote the low temperature growth of CNMs, since CNFs with hollow structures could be synthesized on the APM (Ammonia-hydrogen Peroxide Mixture)-treated, or HCl+HNO3 solution-treated substrates. X-ray photoelectron spectroscopy indicates that this surface treatment could generate the derivatives of Ni element which can increase the interaction between the Ni catalyst and the underlying Ti or TiN contact film and thus promote the CNMs growth at 400°C.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT070052723
http://hdl.handle.net/11536/73277
顯示於類別:畢業論文