標題: Effects of Minority-Carrier Response Behavior on Ge MOS Capacitor Characteristics: Experimental Measurements and Theoretical Simulations
作者: Cheng, Chao-Ching
Chien, Chao-Hsin
Luo, Guang-Li
Ling, Yu-Ting
Chang, Ruey-Dar
Kei, Chi-Chung
Hsiao, Chien-Nan
Liu, Jun-Cheng
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Bulk trap;germanium (Ge);MEDICI simulation;minority-carrier response;MOS capacitor;substrate conductance
公開日期: 1-May-2009
摘要: In this paper, we present MEDICI simulations of the admittance-voltage properties of Ge and Si MOS devices, including analyses of substrate conductance Grub and high-low transition frequency f(tran), to explore the differences in the minority-carrier response. The Arrhenius-dependent G(sub) characteristics revealed that a larger energy loss-by at least four orders of magnitude-occurs in Ge than in Si, reflecting the fast minority-carrier response rate, i.e., a higher value of f(tran). We confirmed that the higher intrinsic carrier concentration in Ge, through the generation/recombination of midgap trap levels as well as the diffusion mechanism, resulted in the onset of low-frequency C-V curves in the kilohertz regime, accompanying the gate-independent inversion conductance. The experimental data obtained from Al(2)O(3)/Ge MOS capacitors were consistent with the values of G(sub) and f(tran) obtained from MEDICI predictions and theoretical calculations. In addition, upon increasing the inversion biases, we observed shifts in the G(sub/)f conductance peaks to low frequencies that mainly arose from the transition of minority carriers with bulk traps in the depletion layer. Meanwhile, we estimated that the bulky defects of ca. (2-4) x 10(15) cm(-3) exist in present-day low-doped Ge wafers.
URI: http://dx.doi.org/10.1109/TED.2009.2016020
http://hdl.handle.net/11536/7267
ISSN: 0018-9383
DOI: 10.1109/TED.2009.2016020
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 56
Issue: 5
起始頁: 1118
結束頁: 1127
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