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dc.contributor.authorLai, Chun-Fengen_US
dc.contributor.authorChi, Jim-Yongen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorYen, Hsi-Hsuanen_US
dc.contributor.authorLee, Chia-Enen_US
dc.contributor.authorChao, Chia-Hsinen_US
dc.contributor.authorHsueh, Han-Tsungen_US
dc.contributor.authorYeh, Wen-Yungen_US
dc.date.accessioned2014-12-08T15:09:27Z-
dc.date.available2014-12-08T15:09:27Z-
dc.date.issued2009-05-25en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.17.008795en_US
dc.identifier.urihttp://hdl.handle.net/11536/7219-
dc.description.abstractFar-field distributions of GaN-based photonic crystal (PhC) film-transferred light-emitting diodes (FT-LEDs) were investigated. The thickness of the device is about 840 nm. The emission wavelength is around 520 nm. The PhC region is a square lattice with a/lambda around 0.5. Angular-resolved measurements in the Gamma-X and Gamma-M directions were made in the polarized-resolved manner. Guided mode extraction behavior in agreement with the two-dimensional free-photon band calculation was observed. In addition, the pseudo-TM behavior for the non-collinearly coupled modes was observed. The azimuthal-mapping of the angular-resolved spectra revealed the evolution of the collinearly and the non-collinearly coupled modes. Furthermore, the light enhancement of similar to 2.7x and the collimation angle about 102.3 degrees were achieved. (c) 2009 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleFar-field of GaN film-transferred green light-emitting diodes with two-dimensional photonic crystalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.17.008795en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume17en_US
dc.citation.issue11en_US
dc.citation.spage8795en_US
dc.citation.epage8804en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000266382200012-
dc.citation.woscount10-
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